Method to produce localized halo for MOS transistor
AssigneeTexas Instruments Incorporated
InventorKaiping Liu
Life of this patent
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Abstract
Methods are discussed for forming a localized halo structure and a retrograde profile in a substrate of a semiconductor device. The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source/drain region of the substrate and underlying a portion of the gate structure. A trench is formed in the source/drain region of the semiconductor substrate thereby removing at least a portion of the halo structure in the source/drain region. A silicon material layer is then formed in the trench using an epitaxial deposition.
Claims14
A method for forming a localized halo structure in a semiconductor substrate of a semiconductor device, comprising:
- providing a gate structure over the semiconductor substrate;
- implanting a dopant material at an angle around the gate structure to form a halo structure in a source/drain region of the semiconductor substrate and underlying a portion of the gate structure;
- forming a trench in the source/drain region of the semiconductor substrate, thereby removing at least a portion of the halo structure in the source/drain region;
- and
- forming a semiconductor material layer in the trench, comprising:
- forming an intrinsic silicon layer in a bottom portion of the trench;
- and
- forming a doped silicon layer in a top portion of the trench overlying the intrinsic silicon layer, wherein the trench is substantially filled having a generally undoped region in a bottom portion of the trench and a generally doped region in a top portion of the trench.
A method for forming a localized halo structure in a semiconductor substrate of a semiconductor device, comprising:
- providing a gate structure over the semiconductor substrate;
- implanting a dopant material at an angle around the gate structure to form a halo structure in a source/drain region of the semiconductor substrate and underlying a portion of the gate structure;
- forming a trench in the source/drain region of the semiconductor substrate, thereby removing at least a portion of the halo structure in the source/drain region;
- forming a semiconductor material layer in the trench;
- and
- implanting an HDD dopant into a top portion of the trench.
Dependencies are inferred from the claim text.