H10D 30/0413
Of fets having charge-trapping gate insulators
Official title: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors}
H10D30/0413 (Of fets having charge-trapping gate insulators) appears on 2,572 US grants and 2,908 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,572
- Published applications
- 2,908
- Assignees
- 303
- Inventors
- 2,849
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 7 | 2 |
| 2002 | 16 | 19 |
| 2003 | 26 | 40 |
| 2004 | 44 | 85 |
| 2005 | 51 | 88 |
| 2006 | 82 | 127 |
| 2007 | 67 | 109 |
| 2008 | 78 | 144 |
| 2009 | 81 | 103 |
| 2010 | 102 | 122 |
| 2011 | 97 | 144 |
| 2012 | 114 | 96 |
| 2013 | 136 | 177 |
| 2014 | 191 | 260 |
| 2015 | 242 | 243 |
| 2016 | 248 | 178 |
| 2017 | 170 | 145 |
| 2018 | 128 | 120 |
| 2019 | 134 | 132 |
| 2020 | 116 | 122 |
| 2021 | 97 | 113 |
| 2022 | 86 | 86 |
| 2023 | 79 | 66 |
| 2024 | 65 | 60 |
| 2025 | 53 | 50 |
| 2026 | 22 | 77 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Method of fabricating a charge-trapping gate stack using a CMOS process flow478US 8,993,457 B1Cypress Semiconductor Corporation · 2015
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014
- Multigate semiconductor device with vertical channel current and method of fabrication396US 6,580,124 B1Matrix Semiconductor, Inc. · 2003
- Method of forming a germanium oxynitride film380US 10,367,080 B2ASM IP Holding B. V. · 2019
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012