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US 10,367,080 B2Granted
Method of forming a germanium oxynitride film
AssigneeASM IP Holding B.V.
InventorsFu Tang, Qi Xie, Jan Willem Maes, Xiaoqiang Jiang, Michael Eugene Givens
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Abstract
A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.
Claims20
A method of forming a germanium oxynitride film comprising:
- providing a substrate for processing in a reaction chamber;
- using a germanium precursor and an oxygen precursor, performing an atomic layer deposition cycle of an oxide comprising germanium onto the substrate;
- and
- before or after performing the atomic layer deposition cycle of the oxide, using a germanium precursor and a nitrogen precursor, performing an atomic layer deposition cycle of a nitride comprising germanium onto the substrate;
- wherein the atomic layer deposition cycle of the oxide and the atomic layer deposition cycle of the nitride are repeated as desired in order to form the germanium oxynitride film of a desired thickness and stoichiometry, and
- wherein the oxygen precursor and the nitrogen precursor are different.
3 more elements
A method of forming a germanium oxynitride film layer for a V-NAND stack comprising:
- providing a substrate for processing in a reaction chamber;
- performing an atomic layer deposition cycle of an oxide onto the substrate, the atomic layer deposition cycle of the oxide comprising:
- pulsing a germanium precursor;
- and
- pulsing an oxygen precursor;
- and
- before or after performing the atomic layer deposition cycle of the oxide, performing an atomic layer deposition cycle of a nitride onto the substrate, the atomic layer deposition cycle of the nitride comprising:
- pulsing a germanium precursor;
- and
- pulsing a nitrogen precursor;
- wherein the atomic layer deposition cycle of the oxide and the atomic layer deposition cycle of the nitride are repeated as desired in order to form the germanium oxynitride film of a desired thickness and stoichiometry, and
- wherein the oxygen precursor and the nitrogen precursor are different.
9 more elements
Dependencies are inferred from the claim text.