H10D 30/0212
Using self-aligned silicidation
Official title: {using self-aligned silicidation}
H10D30/0212 (Using self-aligned silicidation) appears on 5,171 US grants and 5,265 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,171
- Published applications
- 5,265
- Assignees
- 473
- Inventors
- 6,061
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 10 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 11 | 0 |
| 1993 | 11 | 0 |
| 1994 | 7 | 0 |
| 1995 | 9 | 0 |
| 1996 | 11 | 0 |
| 1997 | 16 | 0 |
| 1998 | 44 | 0 |
| 1999 | 109 | 0 |
| 2000 | 143 | 0 |
| 2001 | 227 | 38 |
| 2002 | 156 | 155 |
| 2003 | 158 | 133 |
| 2004 | 155 | 181 |
| 2005 | 133 | 280 |
| 2006 | 184 | 300 |
| 2007 | 162 | 318 |
| 2008 | 195 | 381 |
| 2009 | 193 | 269 |
| 2010 | 260 | 199 |
| 2011 | 235 | 191 |
| 2012 | 180 | 203 |
| 2013 | 195 | 189 |
| 2014 | 194 | 178 |
| 2015 | 199 | 234 |
| 2016 | 228 | 232 |
| 2017 | 215 | 198 |
| 2018 | 234 | 201 |
| 2019 | 199 | 220 |
| 2020 | 230 | 251 |
| 2021 | 182 | 211 |
| 2022 | 167 | 194 |
| 2023 | 147 | 170 |
| 2024 | 142 | 154 |
| 2025 | 155 | 137 |
| 2026 | 46 | 48 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods of forming semiconductor structures15 Sep 2026US 12,740,117 B2APPLIED Materials.Inc.
- Transistor structure with low resistance contact25 Aug 2026US 12,720,801 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same25 Aug 2026US 12,720,824 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Photo mask and lithography method using the same25 Aug 2026US 12,721,115 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having contact field plate (CFP) and method for manufacturing the same18 Aug 2026US 12,713,645 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and fabrication method thereof24 Sep 2026US 2026/0293235 A1United Microelectronics Corp.
- Semiconductor device17 Sep 2026US 2026/0282497 A1United Microelectronics Corp.
- Semiconductor device17 Sep 2026US 2026/0282862 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device10 Sep 2026US 2026/0271370 A1Kioxia Corporation
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Self aligned contact scheme568US 9,548,366 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015