Back to results
US 8,962,400 B2Granted
In-situ doping of arsenic for source and drain epitaxy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJi-Yin Tsai, Yao-Tsung Huang, Chih-Hsin Ko, Clement Hsingjen Wann
Life of this patent
Estimating the term…
Abstract
A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region.
Claims21
A method comprising:
- forming isolation regions in a semiconductor substrate;
- etching a portion of the semiconductor substrate between opposite sidewalls of the isolation regions to form a first recess;
- epitaxially growing a first silicon germanium layer in the first recess, wherein the first silicon germanium layer has a first germanium concentration;
- epitaxially growing a second silicon germanium layer in the recess and over the first silicon germanium layer, wherein the second silicon germanium layer has a second germanium concentration lower than the first germanium concentration;
- forming a gate stack over the second silicon germanium layer;
- recessing the second silicon germanium layer to form a second recess adjacent the gate stack;
- and
- epitaxially growing a silicon-containing semiconductor region in the second recess to form a source/drain stressor, wherein arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region, wherein the silicon-containing semiconductor region comprises silicon germanium stressor having a third germanium concentration lower than the first germanium concentration and the second germanium concentration.
5 more elements
A method comprising:
- epitaxially growing a first silicon germanium layer over and in contact with a portion of a silicon substrate, wherein the first silicon germanium layer has a first germanium concentration;
- epitaxially growing a second silicon germanium layer over and in contact with the first silicon germanium layer, wherein the second silicon germanium layer has a second germanium concentration lower than the first germanium concentration;
- forming a gate stack over the second silicon germanium layer, wherein a portion of the second silicon germanium layer forms a channel region of an n-type metal-oxide-semiconductor (NMOS) field-effect transistor (FET);
- recessing the second silicon germanium layer to form recesses on opposite sides of the gate stack;
- and
- epitaxially growing semiconductor stressors in the recesses, wherein the semiconductor stressors comprise silicon germanium having a third germanium concentration lower than both the first germanium concentration and the second germanium concentration.
3 more elements
A method comprising:
- forming isolation regions in a silicon substrate;
- etching a portion of the silicon substrate between opposite sidewalls of the isolation regions to form a first recess;
- epitaxially growing a first silicon germanium layer in the first recess, wherein the first silicon germanium layer has a first germanium concentration;
- epitaxially growing a second silicon germanium layer in the first recess and over the first silicon germanium layer, wherein the second silicon germanium layer has a second germanium concentration lower than the first germanium concentration;
- recessing portions of the isolation regions on opposite sides of the second silicon germanium layer to form a fin, wherein the fin comprises a top portion of the second silicon germanium layer;
- forming a gate stack on a top surface and sidewalls of the fin;
- forming second recesses on opposite sides of the gate stack, wherein the second recesses penetrate through the second silicon germanium layer and extends into a top portion of the first silicon germanium layer;
- and
- epitaxially growing silicon-containing semiconductor regions in the second recesses to form source/drain regions, wherein the silicon-containing semiconductor regions comprise silicon germanium having a third germanium concentration lower than both the first germanium concentration and the second germanium concentration.
6 more elements
Dependencies are inferred from the claim text.