H10D 30/0213
Providing different silicide thicknesses on gate electrodes and on source regions or
Official title: {providing different silicide thicknesses on gate electrodes and on source regions or drain regions}
H10D30/0213 (Providing different silicide thicknesses on gate electrodes and on source regions or) appears on 247 US grants and 246 published applications in this corpus.
Search patents in H10D- Granted patents
- 247
- Published applications
- 246
- Assignees
- 85
- Inventors
- 502
- Latest grant
- 12 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 7 | 0 |
| 2000 | 10 | 0 |
| 2001 | 17 | 3 |
| 2002 | 11 | 20 |
| 2003 | 17 | 7 |
| 2004 | 10 | 15 |
| 2005 | 12 | 16 |
| 2006 | 6 | 20 |
| 2007 | 12 | 30 |
| 2008 | 12 | 22 |
| 2009 | 15 | 12 |
| 2010 | 16 | 10 |
| 2011 | 15 | 11 |
| 2012 | 7 | 9 |
| 2013 | 9 | 11 |
| 2014 | 14 | 8 |
| 2015 | 6 | 9 |
| 2016 | 8 | 7 |
| 2017 | 3 | 5 |
| 2018 | 10 | 7 |
| 2019 | 6 | 3 |
| 2020 | 1 | 4 |
| 2021 | 3 | 2 |
| 2022 | 4 | 4 |
| 2023 | 2 | 6 |
| 2024 | 5 | 2 |
| 2025 | 2 | 3 |
By publication year. Applications have been published since 2001.
Recent patents
- Transistors with multiple silicide layers12 Aug 2025US 12,389,616 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor devices with backside power rail and method thereof22 Jul 2025US 12,369,365 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing a semiconductor device and a semiconductor device17 Dec 2024US 12,170,325 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Chemical composition for removing nickel-platinum alloy residues from a substrate, and method for removing such residues9 Jul 2024US 12,031,214 B2Technic France
- Carbon implantation for thicker gate silicide25 Jun 2024US 12,020,937 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor devices with backside power rail and method thereof9 Oct 2025US 2025/0318216 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device24 Apr 2025US 2025/0133793 A1Samsung Electronics Co., Ltd.
- Method of manufacturing a semiconductor device and a semiconductor device27 Feb 2025US 2025/0072027 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with backside power rail and method thereof20 Jun 2024US 2024/0204045 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Melt anneal source and drain regions14 Mar 2024US 2024/0088225 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device having metal silicide film220US 5,659,194 AMitsubishi Denki Kabushiki Kaisha · 1997
- Method for forming a transistor having silicided regions129US 5,352,631 AMotorola, Inc. · 1994
- Multiple indium implant methods and devices and integrated circuits therefrom118US 7,960,238 B2Texas Instruments Incorporated · 2011
- Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance109US 5,731,239 AChartered Semiconductor Manufacturing Pte Ltd. · 1998
- Method for forming a silicide region on a silicon body85US 5,888,888 AUltratech Stepper, Inc. · 1999