Transistors with multiple silicide layers
AssigneeGlobalFoundries U.S. Inc.
InventorsMan Gu, Hong Yu, Jianwei Peng, Haiting Wang
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Abstract
Structures for a transistor and methods of forming a structure for a transistor. The structure includes a first dielectric spacer, a second dielectric spacer, and a gate laterally between the first dielectric spacer and the second dielectric spacer. The gate includes a first silicide layer extending from the first dielectric spacer to the second dielectric spacer. The structure further includes a second silicide layer within the first silicide layer, and a contact that is aligned to the second silicide layer.
Claims20
A structure for a transistor, the structure comprising:
- a first dielectric spacer;
- a second dielectric spacer;
- a gate laterally between the first dielectric spacer and the second dielectric spacer, the gate including a first silicide layer extending from the first dielectric spacer to the second dielectric spacer;
- a second silicide layer embedded within the first silicide layer, the second silicide layer extending to a depth in the first silicide layer, and the second silicide layer laterally positioned between a first portion of the first silicide layer and a second portion of the first silicide layer;
- and
- a first contact that is aligned to the second silicide layer.
A method of forming a structure for a transistor, the method comprising:
- forming a gate, wherein the gate is positioned laterally between a first dielectric spacer and a second dielectric spacer, and the gate includes a first silicide layer extending from the first dielectric spacer to the second dielectric spacer;
- forming a second silicide layer embedded within the first silicide layer, wherein the second silicide layer extends to a depth in the first silicide layer, and the second silicide layer is laterally positioned between a first portion of the first silicide layer and a second portion of the first silicide layer;
- and
- forming a first contact that is aligned to the second silicide layer.
Dependencies are inferred from the claim text.