Method for forming a silicide region on a silicon body

A method comprising the steps of:

• a) forming a first insulator layer on a silicon substrate;
• b) patterning the first insulator layer to produce a gate insulator layer;
• c) forming a silicon region over the gate insulator layer;
• d) patterning the silicon region to produce a gate silicon region over the gate insulator layer;
• e) doping at least regions of the silicon substrate adjacent the gate silicon region to form drain and source regions on the silicon substrate;
• f) forming a second insulator layer over the gate silicon region and the silicon substrate;
• g) etching the second insulator layer to form side walls in contact with the side of the gate silicon region;
• h) producing at least one amorphous region in at least one of the gate, source and drain;
• i) forming a metal layer in contact with the amorphous region;
• j) irradiating the metal layer with laser light to diffuse metal into the amorphous region to form an alloy region of silicide composition from the amorphous region;
• k) removing the metal layer;
• and
• l) treating the alloy region to form a silicide region.

A method comprising the steps of:

• a) amorphizing a region of a silicon body;
• b) positioning metal in contact with the amorphized region;
• c) irradiating the amorphized region with light of a power sufficient to melt the amorphized region, yet insufficient to melt the metal and the silicon body, so that metal diffuses into the amorphized region to form an alloy region of silicide composition;
• d) removing the metal from the silicon body;
• and
• e) forming a silicide region from the allow region.