Semiconductor devices with backside power rail and method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
Life of this patent
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Abstract
A semiconductor structure includes one or more channel layers; a gate structure engaging the one or more channel layers; a first source/drain feature connected to a first side of the one or more channel layers and adjacent to the gate structure; a first dielectric cap disposed over the first source/drain feature, wherein a bottom surface of the first dielectric cap is below a top surface of the gate structure; a first via disposed under and electrically connected to the first source/drain feature; and a power rail disposed under and electrically connected to the first via.
Claims20
A semiconductor structure, comprising:
- a first source/drain feature over a backside via;
- a second source/drain feature over a liner;
- a plurality of channel layers extending between the first source/drain feature and the second source/drain feature;
- and
- a gate structure wrapping around each of the plurality of channel layers,
- wherein the liner continuously extends from below the second source/drain feature, to below the gate structure, and then to along a sidewall of the backside via.
A semiconductor structure, comprising:
- a backside rail;
- a backside dielectric layer over the backside rail;
- a backside via rising from the backside rail and extending through the backside dielectric layer;
- a first source/drain feature disposed over the backside via;
- a second source/drain feature disposed over the backside dielectric layer;
- a plurality of nanostructures disposed between and in contact with the first source/drain feature and the second source/drain feature;
- a gate structure wrapping around each of the plurality of nanostructures;
- and
- a liner extending between and interfacing the gate structure and the backside dielectric layer.
A semiconductor structure, comprising:
- a first plurality of nanostructures;
- a second plurality of nanostructures;
- a source/drain feature sandwiched between the first plurality of nanostructures and the second plurality of nanostructures;
- a backside via disposed below the source/drain feature;
- a dielectric plug disposed over the source/drain feature;
- a first silicide feature sandwiched between the backside via and the source/drain feature;
- and
- a second silicide feature sandwiched between the dielectric plug and the source/drain feature,
- wherein the dielectric plug is formed of a dielectric material.
Dependencies are inferred from the claim text.