Method of manufacturing a semiconductor device and a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Wei CHANG, Shahaji B. MORE, Yi-Ying LIU, Yueh-Ching PAI
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Abstract
In method of manufacturing a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, an opening is formed in the one or more dielectric layers to expose the source/drain epitaxial layer, a first silicide layer is formed on the exposed source/drain epitaxial layer, a second silicide layer different from the first silicide layer is formed on the first silicide layer, and a source/drain contact is formed over the second silicide layer.
Claims20
A semiconductor device comprising:
- an epitaxial structure disposed over a substrate;
- first and second stacks of a plurality of spaced-apart nano structures disposed over the substrate on opposing sides of the epitaxial structure along a first direction,
- wherein the nano structures extend in a second direction perpendicular to the first direction and are arranged in a third direction perpendicular to the first and second directions;
- a gate structure wrapping around each of the nano structures;
- a first silicide layer disposed over the epitaxial structure;
- a second silicide layer different from the first silicide layer disposed over the first silicide layer;
- and
- a contact layer disposed over the second silicide layer.
A semiconductor device comprising:
- a gate structure disposed over a substrate;
- source/drain regions disposed over the substrate on opposing sides of the gate structure,
- wherein the source/drain regions comprise:
- a source/drain epitaxial layer;
- an interfacial silicide layer disposed over the source/drain epitaxial layer;
- a first silicide layer disposed over the source/drain epitaxial layer;
- a second silicide layer disposed over the first silicide layer,
- wherein the first silicide layer and second silicide layers are made of different materials;
- a barrier layer disposed over the second silicide layer;
- and
- a source/drain contact disposed over the barrier layer.
A semiconductor device comprising:
- a pair of gate structures disposed over a substrate,
- wherein each of the pair of gate structures includes a gate electrode layer and a cap insulating layer disposed over the gate electrode layer;
- a source/drain epitaxial layer disposed over the substrate in between the pair of gate electrode structures;
- a first silicide layer disposed over the source/drain epitaxial layer;
- a second silicide layer different from the first silicide layer disposed over the first silicide layer;
- a dielectric cover layer disposed over cap insulating layer and contacting the second silicide layer;
- and
- a source/drain contact disposed over the dielectric cover layer and the second silicide layer.
Dependencies are inferred from the claim text.