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US 12,020,937 B2Granted
Carbon implantation for thicker gate silicide
AssigneeGlobalFoundries U.S. Inc.
InventorsJianwei Peng, Hong Yu, Man Gu, Eric S. Kozarsky
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Abstract
Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.
Claims7
A structure comprising:
- a channel region;
- a gate dielectric on the channel region;
- source and drain structures on opposite sides of the channel region;
- and
- a gate conductor on the gate dielectric,
- wherein the source and drain structures include source and drain silicides, respectively,
- wherein the gate conductor includes a gate conductor silicide,
- wherein the gate conductor silicide is thicker than the source and drain silicides, and
- wherein the gate conductor has a higher carbon concentration than the source and drain structures.
6 more elements
Dependencies are inferred from the claim text.