Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a first diffusion layer region and a second diffusion layer region on the semiconductor substrate and spaced apart from each other in a surface direction of the semiconductor substrate;
• a gate insulating film on the semiconductor substrate, at least a part of the gate insulating film being in a region between the first diffusion layer region and the second diffusion layer region;
• a gate electrode on an opposite side of the gate insulating film from the semiconductor substrate;
• a first base conductive region on an opposite side of the first diffusion layer region from the semiconductor substrate, the first base conductive region extending in the surface direction of the semiconductor substrate;
• a first connection conductive region connected to the first base conductive region;
• a second base conductive region on an opposite side of the second diffusion layer region from the semiconductor substrate, the second base conductive region extending in the surface direction of the semiconductor substrate;
• and
• a second connection conductive region connected to the second base conductive region,
• wherein a height of at least one of the first base conductive region and the second base conductive region is equal to or less than a height of the gate electrode.