H10D 30/0221
Having asymmetry in the channel direction
Official title: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
H10D30/0221 (Having asymmetry in the channel direction) appears on 2,682 US grants and 2,709 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,682
- Published applications
- 2,709
- Assignees
- 425
- Inventors
- 3,438
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 6 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 6 | 0 |
| 1992 | 9 | 0 |
| 1993 | 10 | 0 |
| 1994 | 19 | 0 |
| 1995 | 20 | 0 |
| 1996 | 32 | 0 |
| 1997 | 39 | 0 |
| 1998 | 51 | 0 |
| 1999 | 66 | 0 |
| 2000 | 71 | 0 |
| 2001 | 57 | 20 |
| 2002 | 55 | 68 |
| 2003 | 61 | 52 |
| 2004 | 57 | 48 |
| 2005 | 39 | 87 |
| 2006 | 58 | 97 |
| 2007 | 64 | 107 |
| 2008 | 61 | 120 |
| 2009 | 74 | 98 |
| 2010 | 93 | 138 |
| 2011 | 105 | 134 |
| 2012 | 138 | 125 |
| 2013 | 120 | 144 |
| 2014 | 158 | 155 |
| 2015 | 150 | 169 |
| 2016 | 146 | 138 |
| 2017 | 161 | 114 |
| 2018 | 109 | 110 |
| 2019 | 113 | 109 |
| 2020 | 95 | 95 |
| 2021 | 92 | 89 |
| 2022 | 81 | 111 |
| 2023 | 64 | 108 |
| 2024 | 66 | 93 |
| 2025 | 80 | 115 |
| 2026 | 39 | 65 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and methods of formation6 Aug 2026US 2026/0231484 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ldmos device23 Jul 2026US 2026/0214934 A1Suzhou Watech Electronics Co., Ltd.
- Semiconductor device16 Jul 2026US 2026/0206254 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and fabrication method thereof16 Jul 2026US 2026/0206551 A1Vanguard International Semiconductor Corporation
Most cited
By later US patents
- Fabrication process of sub-micrometer channel length MOSFETs281US 4,419,809 AInternational Business Machines Corporation · 1983
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Semiconductor device having metal silicide film220US 5,659,194 AMitsubishi Denki Kabushiki Kaisha · 1997
- Method of forming self-aligned contact structure with locally etched gate conductive layer211US 6,855,610 B2ProMOS Technologies Inc. · 2005