US 12,707,661 B2Granted

Diode and manufacturing method therefor, and semiconductor device

AssigneeCsmc Technologies Fab2 Co., Ltd.

InventorsYan Gu, Hua Song, Nailong He, Sen Zhang

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Abstract

A diode and a manufacturing method therefor, and a semiconductor device. The diode includes: a substrate; an insulating buried layer provided on the substrate; a semiconductor layer provided on the insulating buried layer; anode; and a cathode, comprising: a trench-type contact, a trench being filled with a contact material, the trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, the first surface being a surface distant from the insulating buried layer, and the second surface being a surface facing the insulating buried layer; a cathode doped region surrounding the trench-type contact around and at the bottom of the trench-type contact, and also disposed on the first surface around the trench-type contact; and a negative electrode located on the cathode doped region and electrically connected to the cathode doped region.

Claims19

Dependent claims

A diode based on a silicon on insulator structure, comprising:

a substrate;
an insulating buried layer provided on the substrate;
a semiconductor layer provided on the insulating buried layer;
an anode;
and
a cathode comprising:
at least one trench type contact, a trench being filled with a contact material, the trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, the first surface being a surface away from the insulating buried layer, and the second surface being a surface facing the insulating buried layer;
a cathode doped region having a first conductivity type, the cathode doped region being provided at a periphery and a bottom of the at least one trench type contact and surrounding the at least one trench type contact, and the cathode doped region being provided on the first surface around the at least one trench type contact;
a cathode electrode provided on the cathode doped region and electrically connected to the cathode doped region;
and
a first conductivity type well region provided between a bottom of the at least one trench type contact and the insulating buried layer, the semiconductor layer comprising a drift region of the first conductivity type, a doping concentration of the first conductivity type well region being greater than a doping concentration of the drift region.

8 more elements

A method for manufacturing a diode, the diode being based on a silicon on insulator structure, the method comprising:

providing a base, the base comprising a substrate, an insulating buried layer, and a semiconductor layer that are sequentially stacked;
forming a first trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, wherein the first surface is a surface away from the insulating buried layer, and the second surface is a surface facing the insulating buried layer;
forming a cathode doped region on the semiconductor layer at a periphery and a bottom of the first trench, the cathode doped region having a first conductivity type;
filling a contact material in the first trench;
forming a first conductivity type well region between the bottom of the first trench and the insulating buried layer, the semiconductor layer comprising a drift region of the first conductivity type, a doping concentration of the first conductivity type well region being greater than a doping concentration of the drift region;
and
forming a cathode electrode on the cathode doped region and electrically connected to the cathode doped region.

4 more elements

Dependencies are inferred from the claim text.