Ldmos device
AssigneeSuzhou Watech Electronics Co., Ltd.
InventorsChangchang WANG, Dancheng YUE
Life of this patent
Estimating the term…
Abstract
An LDMOS device includes a substrate structure; a drift region, located in the substrate structure in a vertical direction; a field plate structure, located above the substrate structure in the vertical direction, and projection of a part of the field plate structure in the substrate structure covering a part of the drift region; and a drain region, located in the substrate structure in the vertical direction, wherein at least some of electric field lines of the drain region connected to a high voltage are concentrated in the field plate structure and end in the field plate structure.
Claims12
1-12. (canceled)
An LDMOS device, comprising:
- a base comprising a substrate, an epitaxial layer, a third layer body region, and a drift region;
- and
- a field plate structure:
- wherein the epitaxial layer is located on a surface of the substrate;
- the third layer body region and the drift region are disposed at intervals within the epitaxial layer, doping types of the epitaxial layer and the third layer body region are same, doping types of the drift region and the epitaxial layer are different, and a doping concentration of the drift region is larger than a doping concentration of the epitaxial layer;
- and
- the field plate structure is located on a side of the epitaxial layer away from the substrate, the field plate structure comprises a field plate main portion and an arc field plate located on one side of the field plate main portion, the field plate main portion is in contact with the arc field plate, the field plate structure has a fifth via hole, the fifth via hole is located between the field plate main portion and the arc field plate, a projection of the arc field plate in the epitaxial layer covers a part of the drift region, and a projection of the epitaxial layer between the third layer body region and the drift region in the field plate structure is located in the fifth via hole.
Dependencies are inferred from the claim text.