Monolithic field-effect transistor-antenna device for terahertz wave detection with independent performance parameters

A field-effect transistor for terahertz wave detection using a gate as an antenna, comprising:

• a silicon substrate comprising a source, and a drain formed outside a channel region provided in a form surrounding the source;
• and
• a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, wherein
• the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor,
• the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor,
• the width of the drain is determined based on the first performance parameter,
• the width of the channel region is determined only by the second performance parameter independently of the first performance parameter,
• a center of the source and a center of a circle corresponding to a circumference of the channel region are off-centered from each other, and
• a shortest distance from the source to the drain is different from a longest distance from the source to the drain.