H10D 30/028
Of double-diffused metal oxide semiconductor [dmos] fets
Official title: {of double-diffused metal oxide semiconductor [DMOS] FETs}
H10D30/028 (Of double-diffused metal oxide semiconductor [dmos] fets) appears on 7,669 US grants and 9,312 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,669
- Published applications
- 9,312
- Assignees
- 831
- Inventors
- 6,844
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 6 | 0 |
| 1988 | 5 | 0 |
| 1989 | 13 | 0 |
| 1990 | 14 | 0 |
| 1991 | 10 | 0 |
| 1992 | 17 | 0 |
| 1993 | 22 | 0 |
| 1994 | 27 | 0 |
| 1995 | 32 | 0 |
| 1996 | 23 | 0 |
| 1997 | 23 | 0 |
| 1998 | 51 | 0 |
| 1999 | 51 | 0 |
| 2000 | 66 | 0 |
| 2001 | 52 | 28 |
| 2002 | 58 | 77 |
| 2003 | 70 | 100 |
| 2004 | 85 | 104 |
| 2005 | 88 | 138 |
| 2006 | 86 | 211 |
| 2007 | 95 | 209 |
| 2008 | 116 | 277 |
| 2009 | 150 | 288 |
| 2010 | 255 | 317 |
| 2011 | 291 | 360 |
| 2012 | 287 | 441 |
| 2013 | 366 | 437 |
| 2014 | 472 | 546 |
| 2015 | 516 | 575 |
| 2016 | 510 | 573 |
| 2017 | 553 | 489 |
| 2018 | 442 | 464 |
| 2019 | 475 | 480 |
| 2020 | 447 | 442 |
| 2021 | 359 | 412 |
| 2022 | 357 | 497 |
| 2023 | 301 | 476 |
| 2024 | 281 | 509 |
| 2025 | 319 | 461 |
| 2026 | 253 | 401 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992