Semiconductor die with a vertical device
AssigneeInfineon Technologies Austria AG
InventorsGerhard Thomas Nöbauer, Alessandro Ferrara, Sergey Yuferev, Florian Gasser
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Abstract
The disclosure relates to a semiconductor die with a semiconductor body. The semiconductor die includes a vertical transistor device formed in a first area of the semiconductor body. The vertical transistor device includes a source region at a first side of the semiconductor body and a drain region at a second side of the semiconductor body. The semiconductor die further includes a first electrical isolation between the first area and a second area of the semiconductor body, and a diode in the second area of the semiconductor body. A cathode contact of the diode is electrically connected to the source region of the vertical transistor device.
Claims20
A semiconductor die with a semiconductor body, the semiconductor die comprising:
- a vertical transistor device formed in a first area of the semiconductor body, the vertical transistor device comprising:
- a source region at a first side of the semiconductor body, and
- a drain region at a second side of the semiconductor body;
- a first electrical isolation between the first area and a second area of the semiconductor body;
- and
- a diode in the second area of the semiconductor body,
- wherein a cathode contact of the diode is electrically connected to the source region of the vertical transistor device.
A method of manufacturing a semiconductor die with a semiconductor body, the method comprising:
- forming a vertical transistor device in a first area of the semiconductor body, the vertical transistor device comprising a source region at a first side of the semiconductor body and a drain region at a second side of the semiconductor body;
- forming a first electrical isolation between the first area and a second area of the semiconductor body;
- forming a diode in the second area of the semiconductor body;
- and
- electrically connecting a cathode contact of the diode to the source region of the vertical transistor device.
Dependencies are inferred from the claim text.