H10D 30/0291
Of vertical dmos [vdmos] fets
Official title: {of vertical DMOS [VDMOS] FETs}
H10D30/0291 (Of vertical dmos [vdmos] fets) appears on 5,677 US grants and 7,006 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,677
- Published applications
- 7,006
- Assignees
- 650
- Inventors
- 4,876
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 13 | 0 |
| 1990 | 11 | 0 |
| 1991 | 10 | 0 |
| 1992 | 16 | 0 |
| 1993 | 17 | 0 |
| 1994 | 22 | 0 |
| 1995 | 28 | 0 |
| 1996 | 19 | 0 |
| 1997 | 21 | 0 |
| 1998 | 38 | 0 |
| 1999 | 47 | 0 |
| 2000 | 53 | 0 |
| 2001 | 41 | 19 |
| 2002 | 43 | 54 |
| 2003 | 55 | 71 |
| 2004 | 55 | 72 |
| 2005 | 60 | 104 |
| 2006 | 67 | 169 |
| 2007 | 65 | 155 |
| 2008 | 92 | 218 |
| 2009 | 125 | 245 |
| 2010 | 206 | 244 |
| 2011 | 240 | 302 |
| 2012 | 229 | 361 |
| 2013 | 287 | 346 |
| 2014 | 359 | 390 |
| 2015 | 371 | 421 |
| 2016 | 370 | 433 |
| 2017 | 390 | 359 |
| 2018 | 325 | 351 |
| 2019 | 352 | 355 |
| 2020 | 322 | 313 |
| 2021 | 243 | 293 |
| 2022 | 256 | 360 |
| 2023 | 204 | 338 |
| 2024 | 192 | 392 |
| 2025 | 225 | 349 |
| 2026 | 189 | 292 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992