Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

A silicon carbide substrate, wherein

• when a first wavenumber is defined as a Raman shift at which an intensity of a Raman spectrum is maximum in a Raman shift range of 1300 cm−1 or more and 1800 cm−1 or less, a second wavenumber is defined as a Raman shift apart from the first wavenumber by 30 cm−1 to a lower wavenumber side, a first intensity ratio is defined as a ratio of the intensity of the Raman spectrum at the first wavenumber to an intensity of the Raman spectrum at a Raman shift of 1300 cm−1, a second intensity ratio is defined as a ratio of an intensity of the Raman spectrum at the second wavenumber to the intensity of the Raman spectrum at the Raman shift of 1300 cm−1, a first intensity ratio difference is defined as a value obtained by subtracting the second intensity ratio from the first intensity ratio, and a second intensity ratio difference is defined as a value obtained by subtracting 1 from the first intensity ratio, the first intensity ratio is less than 1.03, or the first intensity ratio difference is less than 50% of the second intensity ratio difference.