H10D 30/0295
Using recessing of the source electrodes
Official title: {using recessing of the source electrodes}
H10D30/0295 (Using recessing of the source electrodes) appears on 1,298 US grants and 1,622 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,298
- Published applications
- 1,622
- Assignees
- 249
- Inventors
- 1,410
- Latest grant
- 29 Sep 2026
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By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Vertical power MOSFET structure having reduced cell area198US 5,366,914 ANEC Corporation · 1994
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- Trench power MOSFET device140US 4,967,245 ASiliconix Incorporated · 1990
- High density MOS-gated power device and process for forming same139US 6,188,105 B1Intersil Corporation · 2001