Power mosfet device having a source region embedded via heteroepitaxial growth and manufacturing method for power mosfet device

A manufacturing method for a power MOSFET device having a source region embedded via heteroepitaxial growth, comprising:

• S100, growing an epitaxial layer on a silicon substrate;
• S200, forming a trench gate structure on the epitaxial layer;
• S300, forming a body region on an upper part of the epitaxial layer by injecting impurities in the upper part of the epitaxial layer;
• activating the impurities in the body region through a thermal process, wherein, silicon disposed at an upper part of the epitaxial layer and at an upper part of the trench gate structure is oxidized to form a surface oxide layer;
• S400, removing a portion of the surface oxide layer formed in a predetermined region;
• and performing anisotropic etching to etch the predetermined region to form a source groove;
• S500, growing heteroepitaxy to fill the source groove to form a source region;
• S600, preparing a source contact penetrating the source region and extending into the body region, forming an ohmic contact area at a bottom of the source contact;
• and
• S700, performing subsequent preparing processes.