Power Semiconductor Device and Method of Producing a Power Semiconductor Device

A method of producing a power semiconductor device, the method comprising:

• forming a semiconductor body including a drift region of a first conductivity type arranged between a front side and a back side of the semiconductor body;
• forming a first load terminal at the front side and a second load terminal at the back side, wherein the semiconductor body is configured to conduct a load current along a vertical direction between the first load terminal and the second load terminal;
• forming a plurality of trenches extending from the front side along the vertical direction into the semiconductor body;
• forming a plurality of mesas from portions of the semiconductor body laterally confined by the plurality of trenches, wherein each trench includes a trench electrode and a trench insulator isolating the trench electrode from the semiconductor body, wherein a portion of the trench insulator extends above both the trench electrode and the adjacent mesa;
• forming a plurality of first contacts electrically connecting the mesas;
• forming a plurality of second contacts electrically connecting the trench electrodes;
• and
• forming at least one of the following:
• a plurality of first spacer pairs, wherein each first spacer pair is associated with one of the mesas and arranged:
• above both the mesa and the trench electrodes adjacent to the mesa;
• adjacent to one of the first contacts electrically connecting the mesa;
• and
• between the trench insulators of the trenches adjacent to the mesa;
• and/or
• a plurality of second spacer pairs, wherein each second spacer pair is associated with one of the trench electrodes and arranged:
• above both the trench electrode and the adjacent mesas;
• adjacent to one of the second contacts electrically connecting the trench electrode;
• and
• between portions of the trench insulator isolating the trench electrode from the semiconductor body.