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US 5,366,914 AGranted
Vertical power MOSFET structure having reduced cell area
AssigneeNEC Corporation
InventorsNobumitsu Takahashi, Mitsuasa Takahashi, Hitoshi Kubota
Life of this patent
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Abstract
In a vertical power field effect transistor, a side surface of a gate electrode is covered with a side oxide film, and a groove is formed in self-alignment with the side oxide film to extend from a surface area of a silicon substrate between a pair of adjacent gate electrodes, to reach a base region. A tungsten film is filled into the groove thus formed, and a source electrode-is formed in contact with the tungsten film within the groove.
Claims2
A method for manufacturing a vertical power field effect transistor comprising the steps of:
- forming a first insulating film covering on a principal surface of a semiconductor substrate of a first conductivity type;
- forming a conducting layer on said first insulating film;
- forming a first interlayer insulating film covering said conducting layer;
- patterning a stacked structure formed of said first insulating film, said conducting layer and said first interlayer film so as to form a patterned stacked structure and to expose a portion of said substrate uncovered by said patterned stacked structure, said first insulating film of said patterned stacked structure forming a gate insulator film, said conducting layer of said patterned stacked structure forming a gate electrode;
- introducing an impurity of a second conductivity type opposite to said first conductivity type into said exposed portion of said substrate by using the patterned stacked structure as a mask, so that a base region extending under said gate electrode is formed;
- introducing an impurity of said first conductivity type by using the patterned stacked structure as a mask, so that a source region smaller than said base region is formed in said base region and extends under said gate electrode;
- forming a second interlayer insulating film on said principal surface of said substrate;
- anisotropically etching said second interlayer insulating film so as to form a side insulating film which covers only each side surface of the gate electrode and the gate insulator film;
- anisotropically etching said substrate by using the side insulating films as a mask, so as to form, in a self-alignment manner, a groove which extends downward from said principal surface of said silicon substrate to pass through said source region and to reach said base region;
- filling said groove with a metal film;
- forming a metal film evaporated on the entire resulting surface;
- and
- patterning said metal film to form a source electrode which is electrically connected to said metal filled in said groove.
10 more elements
A method for manufacturing a vertical power field effect transistor comprising the steps of:
- forming a drain layer of a first conductivity type at an upper surface of a semiconductor substrate of said first conductivity type;
- forming at an upper surface of said drain layer a base layer of a second conductivity type opposite to said first conductivity type;
- forming a source layer of said first conductivity type at an upper surface of said base layer;
- forming in said substrate a plurality of vertical trenches separated from each other and passing through said source layer and said base layer to reach said drain layer;
- forming a gate oxide film covering said principal surface of said substrate and an inner surface of said trenches;
- forming a gate electrode layer covering said gate oxide film at said principal surface of said substrate and within said trenches;
- forming a first interlayer insulating film on said gate electrode layer at said principal surface of said substrate and within said trenches;
- patterning a stacked structure composed of said gate oxide film, said gate electrode layer and said first interlayer insulating film so as to form a pattern stacked structure and to expose a portion of said substrate, said gate electrode layer of said patterned stacked structure forming a gate electrode;
- forming a second interlayer insulating film on said principal surface of said substrate;
- anisotropically etching said second interlayer insulating film so as to form a side insulating film which covers only each side surface of the gate electrode, the gate insulator film and the remaining first interlayer insulating film;
- anisotropically etching said substrate by using the side insulating films as a mask, so as to form, in a self-alignment manner, a groove which extends downward from said principal surface of said substrate to pass through said source region and to reach said base region;
- filling said groove with a metal film;
- forming a metal film evaporated on the entire resulting surface;
- and
- patterning said metal film to form a source electrode which is electrically connected to said metal filled in said groove.
12 more elements
Dependencies are inferred from the claim text.