Semiconductor device with groove structure

A semiconductor device comprising:

• a chip having a first main surface on one side and a second main surface on the other side;
• a first conductivity type first semiconductor region formed in a region on the first main surface side in the chip;
• a second conductivity type second semiconductor region formed in a region on the second main surface side than the first semiconductor region in the chip;
• a first groove structure including a first groove formed in the first main surface while passing through the first semiconductor region so as to partition the first semiconductor region into a first region on one side and a second region on the other side as viewed in cross-section, a control insulating film that covers a wall surface of the first groove, and a control electrode embedded in the first groove while sandwiching the control insulating film so as to control a channel in the second semiconductor region;
• a first electrode electrically connected to the first semiconductor region in the first region;
• and
• a second groove structure including a second groove formed in the first main surface while passing through the first semiconductor region in the second region, and a second electrode embedded in the second groove so as to form a current path via the channel between the first electrode and the second electrode.