H10D 30/0297
Using recessing of the gate electrodes
Official title: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
H10D30/0297 (Using recessing of the gate electrodes) appears on 3,626 US grants and 4,798 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,626
- Published applications
- 4,798
- Assignees
- 463
- Inventors
- 3,357
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 9 | 0 |
| 1999 | 10 | 0 |
| 2000 | 10 | 0 |
| 2001 | 12 | 9 |
| 2002 | 15 | 15 |
| 2003 | 15 | 32 |
| 2004 | 23 | 33 |
| 2005 | 33 | 57 |
| 2006 | 26 | 106 |
| 2007 | 30 | 104 |
| 2008 | 62 | 158 |
| 2009 | 92 | 165 |
| 2010 | 138 | 173 |
| 2011 | 178 | 201 |
| 2012 | 159 | 240 |
| 2013 | 193 | 228 |
| 2014 | 249 | 246 |
| 2015 | 227 | 263 |
| 2016 | 237 | 281 |
| 2017 | 257 | 246 |
| 2018 | 211 | 231 |
| 2019 | 238 | 254 |
| 2020 | 217 | 215 |
| 2021 | 174 | 225 |
| 2022 | 184 | 268 |
| 2023 | 157 | 255 |
| 2024 | 139 | 300 |
| 2025 | 156 | 280 |
| 2026 | 147 | 213 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Three-dimensional (3D) trenched metal-oxide-semiconductor field-effect transistor (MOSFET) device including first doped wells and second doped wells and method for fabricating the same29 Sep 2026US 12,751,043 B2Taipei Anjet Corporation
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
- Power device and manufacturing method thereof1 Oct 2026US 2026/0304829 A1Chongqing Simic Semiconductor Limited
Most cited
By later US patents
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Method for increasing the performance of trenched devices and the resulting structure264US 4,893,160 ASiliconix Incorporated · 1990
- Silicon carbide power MOSFET with floating field ring and floating field plate237US 5,233,215 ANorth Carolina State University at Raleigh · 1993