H10D 30/0281
Of lateral dmos [ldmos] fets
Official title: {of lateral DMOS [LDMOS] FETs}
H10D30/0281 (Of lateral dmos [ldmos] fets) appears on 2,124 US grants and 2,468 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,124
- Published applications
- 2,468
- Assignees
- 382
- Inventors
- 2,662
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 6 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 9 | 0 |
| 1999 | 3 | 0 |
| 2000 | 14 | 0 |
| 2001 | 9 | 8 |
| 2002 | 16 | 17 |
| 2003 | 15 | 28 |
| 2004 | 28 | 28 |
| 2005 | 29 | 31 |
| 2006 | 14 | 47 |
| 2007 | 27 | 59 |
| 2008 | 25 | 61 |
| 2009 | 30 | 50 |
| 2010 | 54 | 80 |
| 2011 | 57 | 64 |
| 2012 | 64 | 94 |
| 2013 | 89 | 99 |
| 2014 | 117 | 163 |
| 2015 | 160 | 182 |
| 2016 | 165 | 174 |
| 2017 | 188 | 143 |
| 2018 | 140 | 134 |
| 2019 | 141 | 127 |
| 2020 | 132 | 137 |
| 2021 | 119 | 118 |
| 2022 | 101 | 138 |
| 2023 | 97 | 140 |
| 2024 | 91 | 118 |
| 2025 | 92 | 115 |
| 2026 | 66 | 113 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage semiconductor device and method of manufacturing same29 Sep 2026US 12,751,041 B2DB HiTek Co., Ltd.
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,745,417 B2Renesas Electronics Corporation
- Semiconductor device and method for manufacturing the same8 Sep 2026US 12,733,192 B2Silergy Semiconductor Technology (Hangzhou) LTD
- Transistor8 Sep 2026US 12,733,202 B2Samsung Electronics Co., Ltd.
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
Most cited
By later US patents
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode205US 6,346,451 B1Philips Electronics North America Corporation · 2002
- Method of making a high-voltage transistor with multiple lateral conduction layers182US 6,168,983 APower Integrations, Inc. · 2001
- Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor180US 7,405,117 B2Volterra Semiconductor Corporation · 2008
- Trench power MOSFET device140US 4,967,245 ASiliconix Incorporated · 1990