H10D 30/0289
Using recessing of the gate electrodes
Official title: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
H10D30/0289 (Using recessing of the gate electrodes) appears on 310 US grants and 352 published applications in this corpus.
Search patents in H10D- Granted patents
- 310
- Published applications
- 352
- Assignees
- 103
- Inventors
- 447
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 4 | 5 |
| 2004 | 2 | 1 |
| 2005 | 2 | 3 |
| 2006 | 2 | 4 |
| 2007 | 2 | 7 |
| 2008 | 1 | 13 |
| 2009 | 5 | 6 |
| 2010 | 9 | 11 |
| 2011 | 8 | 9 |
| 2012 | 11 | 13 |
| 2013 | 11 | 19 |
| 2014 | 17 | 20 |
| 2015 | 20 | 28 |
| 2016 | 22 | 28 |
| 2017 | 31 | 29 |
| 2018 | 26 | 28 |
| 2019 | 30 | 19 |
| 2020 | 24 | 25 |
| 2021 | 20 | 23 |
| 2022 | 15 | 10 |
| 2023 | 17 | 21 |
| 2024 | 12 | 10 |
| 2025 | 9 | 8 |
| 2026 | 6 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- High performance laterally-diffused metal-oxide semiconductor structure14 Jul 2026US 12,684,805 B2GLOBALFOUNDRIES U. S. Inc.
- Trench gate NMOS transistor and trench gate PMOS transistor monolithically integrated in same semiconductor die23 Jun 2026US 12,666,705 B2Infineon Technologies Austria AG
- Semiconductor device and method of fabricating a semiconductor device10 Mar 2026US 12,575,176 B2Infineon Technologies Austria AG
- Semiconductor device and method of fabricating a semiconductor device10 Feb 2026US 12,550,422 B2Infineon Technologies Austria AG
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Semiconductor devices with channel and junction structures and methods of fabrication thereof6 Aug 2026US 2026/0231466 A1
- Semiconductor device16 Jul 2026US 2026/0206254 A1Samsung Electronics Co., Ltd.
- High voltage semiconductor devices2 Jul 2026US 2026/0190382 A1Samsung Electronics Co., Ltd.
- High voltage semiconductor devices2 Jul 2026US 2026/0190383 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of fabricating a high-voltage transistor with a multi-layered extended drain structure67US 6,635,544 B2Power Intergrations, Inc. · 2003
- Method of fabricating a high-voltage transistor with a multi-layered extended drain structure52US 6,750,105 B2Power Integrations, Inc. · 2004
- High-voltage lateral DMOS device51US 7,719,054 B2Advanced Analogic Technologies (Hong Kong) Limited · 2010
- Semiconductor device including lateral MOS element50US 6,072,215 AKabushiki Kaisha Toyota Chuo Kenkyusho · 2000
- Method of fabricating a high-voltage transistor with a multi-layered extended drain structure50US 6,667,213 B2Power Integrations, Inc. · 2003