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US 12,684,805 B2Granted
High performance laterally-diffused metal-oxide semiconductor structure
AssigneeGlobalFoundries U.S. Inc.
InventorsShesh Mani Pandey, Rajendran Krishnasamy
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to laterally-diffused metal-oxide semiconductors and methods of manufacture. The structure includes: a drift region within a semiconductor substrate; a shallow trench isolation structure extending within the drift region; and a gate structure over the semiconductor substrate and extending within the shallow trench isolation structure.
Claims19
A structure comprising:
- a drift region within a semiconductor substrate and which includes a trench structure;
- a shallow trench isolation structure comprising a trench within insulator material, the insulator material and the trench extending within the trench structure of the drift region;
- and
- a gate structure comprising gate dielectric materials fully extending into the trench of the shallow trench isolation structure and over the semiconductor substrate and on an upper surface of the drift region, and a gate electrode material, wherein one of the gate dielectric materials comprise a high-k dielectric material, and wherein the insulator material of the shallow trench isolation structure is adjacent to a source region and is constrained to cover the drift region and a portion of the semiconductor substrate which is devoid of an implanted region.
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A structure comprising:
- a trench structure extending into a semiconductor substrate;
- a shallow trench isolation structure extending into the trench structure, wherein sidewalls of the shallow trench isolation structure is fully contained within the trench structure;
- and
- a gate structure comprising gate dielectric materials and a gate electrode, the gate dielectric materials and the gate electrode being over an upper surface of the semiconductor substrate and fully extending within a trench of the shallow trench isolation structure, wherein the gate dielectric materials comprise a layer of dielectric material that has a same thickness and a same composition as insulator material of the shallow trench isolation structure, wherein the layer of dielectric material and the insulator material run coextensively along the trench of the shallow trench isolation structure.
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A method comprising:
- forming a trench structure extending into a semiconductor substrate;
- forming a shallow trench isolation structure extending into the trench structure, wherein sidewalls of the shallow trench isolation structure is fully contained within the trench structure;
- and
- forming a gate structure comprising gate dielectric materials and a gate electrode, the gate dielectric materials and the gate electrode being over an upper surface of the semiconductor substrate and fully extending within a trench of the shallow trench isolation structure, wherein the gate dielectric materials comprise a layer of dielectric material that has a same thickness and a same composition as insulator material of the shallow trench isolation structure, wherein the layer of dielectric material and the insulator material run coextensively along the trench of the shallow trench isolation structure.
1 more element
Dependencies are inferred from the claim text.