H10D 30/0287
Using recessing of the source electrodes
Official title: {using recessing of the source electrodes}
H10D30/0287 (Using recessing of the source electrodes) appears on 153 US grants and 172 published applications in this corpus.
Search patents in H10D- Granted patents
- 153
- Published applications
- 172
- Assignees
- 69
- Inventors
- 214
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 2 | 2 |
| 2006 | 0 | 3 |
| 2007 | 0 | 1 |
| 2008 | 2 | 1 |
| 2009 | 1 | 4 |
| 2010 | 1 | 12 |
| 2011 | 7 | 8 |
| 2012 | 8 | 8 |
| 2013 | 12 | 10 |
| 2014 | 11 | 15 |
| 2015 | 9 | 11 |
| 2016 | 13 | 16 |
| 2017 | 10 | 17 |
| 2018 | 14 | 16 |
| 2019 | 19 | 6 |
| 2020 | 10 | 16 |
| 2021 | 9 | 5 |
| 2022 | 6 | 8 |
| 2023 | 7 | 4 |
| 2024 | 3 | 0 |
| 2025 | 1 | 6 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Trench power MOSFET device140US 4,967,245 ASiliconix Incorporated · 1990
- Lateral diffused MOS transistor with trench source contact98US 5,869,875 ASpectrian Corporation · 1999
- Method of fabrication lateral FET structure having a substrate to source contact69US 4,738,936 AAcrian, Inc. · 1988
- Process for making a self aligned vertical field effect transistor having an improved source contact56US 4,960,723 AMotorola, Inc. · 1990
- Power device integration on a common substrate34US 8,674,440 B2Io Semiconductor, Inc. · 2014