US 4,738,936 AGranted

Method of fabrication lateral FET structure having a substrate to source contact

AssigneeAcrian, Inc.

InventorEdward J. Rice

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Abstract

An MOS transistor is fabricated which is especially suitable for use in the VHF and UHF regions, comprising a common source lateral MOSFET formed on a substrate, the substrate serving as the connection for the source to the header. The substrate, which is preferably P-type, has P-type and N-type epitaxial regions lying thereon and a sinker which forms a connection from source to substrate. The vertically isolated field effect transistor has a drain on top of a mesa on the N-type epitaxial region of the substrate, a gate in the contact region overhanging the edge of a channel formed adjacent to the mesa, and a source in the lateral edges of the groove defining the edge of the mesa. The process provides for simultaneous diffusion of the source and drain regions, followed by a metal masking step for connection of the diffused source which lies in the lateral edge of the groove to the sinker, effectively connecting the source to the substrate.

Claims5

Dependent claims

A method of forming an MOS transistor in a substrate comprising at least a highly doped layer of a first conductivity type, a lightly doped epitaxial layer thereon of the same first conductivity type and an epitaxial layer thereon of opposite conductivity type, comprising the steps of

(a) forming a sinker of first conductivity type defining the region in which said transistor is to be formed, said sinker extending down to said highly doped layer;
(b) forming a mesa whose side walls include a narrow region of first conductivity type extending from said mesa to said sinker;
(c) diffusing a source region into the side walls of said mesa and a drain region into the top of said mesa;
(d) forming a conductive layer extending from said source region to said sinker region whereby said MOS transistor source is in contact with said highly conductive bottom layer of said substrate, and
(e) forming a gate contact at an end of said mesa separated from a drain contact on said mesa, and a source contact to the source region in the side wall of said mesa to complete said MOS transistor.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 06/872,307Filed 9 Jun 1986 · continuation
Priority: 1 Jul 1983
Granted: 19 Apr 1988
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 64/254
Source or drain electrodes for field-effect devices: for lateral devices wherein the source or drain electrodes extend entirely through the…
H10D 30/0221
Of FETs having insulated gates [IGFET]: having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or…
H10D 30/0287
Of lateral dmos [ldmos] fets: using recessing of the source electrodes
H10D 30/603
Having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs: having asymmetry in the channel direction, e.g. lateral…