Structure and method for manufacturing a trench power MOSFET
AssigneeSK keyfoundry Inc.
InventorHyun Kwang Shin
Life of this patent
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Abstract
A trench power MOSFET includes a body region disposed on a semiconductor substrate, a trench passing through the body region, an top electrode and a bottom electrode spaced apart from each other in a vertical direction in the trench, an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode, and a plurality of dielectric layers, disposed between a sidewall of the trench and the bottom electrode, comprising a first oxide layer disposed on the sidewall of the trench, an barrier layer disposed on the first oxide layer, and a second oxide layer disposed on the barrier layer. The barrier layer is formed of a material different from materials of the first and second oxide layers.
Claims21
A trench power MOSFET comprising:
- a body region disposed on a semiconductor substrate;
- a trench passing through the body region;
- a top electrode and a bottom electrode spaced apart from each other in a vertical direction in the trench;
- an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode;
- and
- a plurality of dielectric layers, disposed between a sidewall of the trench and the bottom electrode and comprising a first oxide layer disposed on the sidewall of the trench, a barrier layer disposed on the first oxide layer, and a second oxide layer disposed on the barrier layer,
- wherein the barrier layer is disposed spaced apart from the top electrode, and
- wherein the barrier layer is formed of a material different from materials of the first and second oxide layers.
A method of manufacturing a trench power MOSFET comprising:
- forming a trench in a semiconductor substrate;
- forming a first oxide layer on a sidewall of the trench;
- forming a barrier layer on the first oxide layer;
- forming a second oxide layer on the barrier layer;
- forming a bottom electrode in the second oxide layer;
- forming inter-electrode dielectric layer on the bottom electrode;
- sequentially etching the second oxide layer, the barrier layer, and the first oxide layer to expose the sidewall of the trench;
- forming a gate dielectric layer on the exposed trench sidewall;
- and
- forming a top electrode on the gate dielectric layer.
A trench power MOSFET comprising:
- a trench disposed in a semiconductor substrate;
- a bottom electrode disposed in the trench;
- a top electrode disposed on the bottom electrode;
- an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode;
- a first oxide layer disposed on a sidewall of the trench;
- a barrier layer disposed on the first oxide layer;
- and
- a second oxide layer disposed on the barrier layer,
- wherein the barrier layer is disposed spaced apart from the top electrode, and
- wherein the barrier layer is formed of a material different from materials of the first and second oxide layers.
Dependencies are inferred from the claim text.