H10D 30/0285
Using formation of insulating sidewall spacers
Official title: {using formation of insulating sidewall spacers}
H10D30/0285 (Using formation of insulating sidewall spacers) appears on 562 US grants and 645 published applications in this corpus.
Search patents in H10D- Granted patents
- 562
- Published applications
- 645
- Assignees
- 150
- Inventors
- 878
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 2 |
| 2003 | 1 | 4 |
| 2004 | 2 | 7 |
| 2005 | 9 | 7 |
| 2006 | 2 | 17 |
| 2007 | 13 | 17 |
| 2008 | 8 | 19 |
| 2009 | 9 | 17 |
| 2010 | 14 | 29 |
| 2011 | 24 | 20 |
| 2012 | 26 | 33 |
| 2013 | 26 | 22 |
| 2014 | 34 | 57 |
| 2015 | 39 | 34 |
| 2016 | 41 | 40 |
| 2017 | 47 | 25 |
| 2018 | 34 | 34 |
| 2019 | 27 | 36 |
| 2020 | 38 | 41 |
| 2021 | 40 | 39 |
| 2022 | 26 | 37 |
| 2023 | 29 | 39 |
| 2024 | 27 | 19 |
| 2025 | 19 | 25 |
| 2026 | 15 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,745,417 B2Renesas Electronics Corporation
- Lateral fin field-effect transistors4 Aug 2026US 12,701,738 B2Texas Instruments Incorporated
- Metal-oxide semiconductor transistors21 Jul 2026US 12,690,226 B2Globalfoundries Singapore Pte. Ltd.
- Transistor device having a gate setback from a gate dielectric7 Jul 2026US 12,677,455 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage field effect transistors with superjunctions and method of making the same16 Jun 2026US 12,660,256 B2SanDisk Technologies LLC
- Transistor device having a gate setback from a gate dielectric1 Oct 2026US 2026/0304870 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor for reducing hot carrier damage and methods for forming the same17 Sep 2026US 2026/0282425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Power semiconductor device and method for fabricating the same20 Aug 2026US 2026/0247654 A1Hyundai Mobis Co., Ltd.
- Semiconductor structure and method of manufacturing the same13 Aug 2026US 2026/0239661 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with channel and junction structures and methods of fabrication thereof6 Aug 2026US 2026/0231466 A1
Most cited
By later US patents
- Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor180US 7,405,117 B2Volterra Semiconductor Corporation · 2008
- Laterally diffused metal oxide semiconductor device and method of forming the same98US 7,230,302 B2Enpirion, Inc. · 2007
- LDMOS power device with oversized dwell96US 6,424,005 B1Texas Instruments Incorporated · 2002
- LDMOS transistors and methods for making the same67US 6,900,101 B2Texas Instruments Incorporated · 2005
- High voltage N-LDMOS transistors having shallow trench isolation region64US 6,876,035 B2International Business Machines Corporation · 2005