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US 12,690,226 B2Granted
Metal-oxide semiconductor transistors
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorBong Woong Mun
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to metal-oxide semiconductor transistors and methods of manufacture. The structure includes: a substrate comprising a drift region and a body region; a gate structure between the drift region and the body region; an insulator material over the gate structure, the drift region and the body region; and an air gap within the insulator material and extending into the drift region.
Claims18
A structure comprising:
- a substrate comprising a drift region and a body region;
- a gate structure between the drift region and the body region;
- an insulator material over the gate structure, the drift region and the body region;
- and
- an air gap within the insulator material and extending into the drift region,
- wherein the air gap extends through a dielectric layer partially under a gate electrode of the gate structure.
3 more elements
A structure comprising:
- a substrate comprising a drift region and a body region;
- a gate structure between the drift region and the body region;
- a field plate extending from the body region, over the gate structure and towards the drift region;
- and
- an air gap extending into the body region.
2 more elements
A method comprising:
- forming a substrate comprising a drift region and a body region;
- forming a gate structure between the drift region and the body region;
- forming an insulator material over the gate structure, the drift region and the body region;
- and
- forming an air gap within the insulator material and extending into the body region, wherein the air gap extends through a dielectric layer partially under a gate electrode of the gate structure.
2 more elements
Dependencies are inferred from the claim text.