Transistor device having a gate setback from a gate dielectric

A method for forming an integrated chip, the method comprising:

• forming a trench isolation layer surrounding an active area of a semiconductor substrate;
• etching the active area of the semiconductor substrate to form a gate dielectric recess in the active area of the semiconductor substrate, wherein the trench isolation layer surrounds the gate dielectric recess, and wherein a first sidewall of the trench isolation layer partially forms the gate dielectric recess;
• forming a gate dielectric layer in the gate dielectric recess, wherein a first sidewall of the gate dielectric layer extends along the first sidewall of the trench isolation layer;
• depositing a gate layer over the gate dielectric layer;
• etching the gate layer to form a first sidewall of the gate layer, a bottom of the first sidewall of the gate layer being over a topmost surface of the gate dielectric layer and offset from the first sidewall of the gate dielectric layer;
• and
• forming a first source/drain region and a second source/drain region in the semiconductor substrate, wherein the gate dielectric layer is laterally between the first source/drain region and the second source/drain region.

A method of forming an integrated chip, the method comprising:

• forming a gate dielectric layer over a portion of a semiconductor substrate and laterally between a first source/drain region and a second source/drain region of the semiconductor substrate, wherein a thickness of the gate dielectric layer along a first sidewall of the gate dielectric layer is less than an average thickness of the gate dielectric layer;
• forming a trench isolation layer surrounding the portion of the semiconductor substrate, wherein a first sidewall of the trench isolation layer extends along the first sidewall of the gate dielectric layer and a first sidewall of the semiconductor substrate;
• and
• forming a gate layer on the gate dielectric layer and between the first source/drain region and the second source/drain region,
• wherein an upper surface of the gate dielectric layer extends laterally from a top of the first sidewall of the gate dielectric layer to a bottom of a first sidewall of the gate layer, and wherein a top of the first sidewall of the semiconductor substrate is under a bottom of the first sidewall of the gate dielectric layer and over a bottommost surface of the gate dielectric layer.