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US 12,745,417 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorYotaro Goto
Life of this patent
Estimating the term…
Abstract
In a semiconductor substrate, an n-type source region, an n-type drain region, a first p-type semiconductor region, and a second p-type semiconductor region surrounding the n-type source region and the first p-type semiconductor region are formed. A gate electrode is formed on the semiconductor substrate between the n-type source region and the n-type drain region via a dielectric film GF. In the semiconductor substrate, a recessed portion is formed so as to penetrate through the n-type source region, and the first p-type semiconductor region is formed under the recessed portion.
Claims14
A semiconductor device comprising:
- a semiconductor substrate;
- a source region of a first conductivity type of a MISFET and a drain region of the first conductivity type of the MISFET, the source region and the drain region being formed spaced apart from each other in the semiconductor substrate;
- a gate electrode of the MISFET, the gate electrode being formed on the semiconductor substrate between the source region and the drain region via a gate dielectric film;
- a recessed portion formed on the semiconductor substrate and penetrating the source region;
- at least one first semiconductor region of a second conductivity type formed under the recessed portion, the second conductivity type being opposite the first conductivity type;
- a second semiconductor region of the second conductivity type formed in the semiconductor substrate so as to surround the source region and the at least one first semiconductor region;
- an interlayer dielectric layer provided on the semiconductor substrate;
- a first contact plug electrically connected to the at least one first semiconductor region;
- and
- sidewall dielectric films formed on side surfaces of the recessed portion,
- wherein the first contact plug penetrates through the interlayer dielectric layer, passes through between the sidewall dielectric films and reaches an upper surface of the at least one first semiconductor region.
8 more elements
Dependencies are inferred from the claim text.