Laterally diffused metal oxide semiconductor device and method of forming the same

A semiconductor device on a semiconductor substrate, comprising:

• a complementary metal oxide semiconductor device formed on said semiconductor substrate;
• and
• a laterally diffused metal oxide semiconductor device, including:
• a gate located over a channel region recessed into said semiconductor substrate,
• a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent to but not surrounded by said lightly doped region within said semiconductor substrate,
• an oppositely doped well located under and within said channel region,
• a doped region, located between said heavily doped region of said source/drain and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region of said source/drain,
• another source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, and
• another doped region, located between said heavily doped region of said another source/drain and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region of said another source/drain.