Power semiconductor device and method for fabricating the same
AssigneeHyundai Mobis Co., Ltd.
InventorTae Yeop KIM
Life of this patent
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Abstract
Provided are a power semiconductor device and a method for fabricating the same. The power semiconductor device includes an epitaxial layer having a first conductive type, a first and a second well regions having a second conductive type, and spaced apart from each other while making contact with the epitaxial layer, a first doping region having the second conductive type, and disposed at an upper portion of the epitaxial layer, between the first and the second well regions, a second doping region having the first conductive type, and disposed between the first well region and one side of the first doping region, and a third doping region having the first conductive type, and disposed between the second well region and an opposite side of the first doping region.
Claims20
A power semiconductor device comprising:
- an epitaxial layer including impurities in a first conductive type;
- a first well region and a second well region including impurities in a second conductive type different from the first conductive type, and disposed to be spaced apart from each other by a predetermined distance while making contact with the epitaxial layer;
- a first source region and a second source region including the impurities in the first conductive type, and disposed on top surfaces of the first well region and the second well region, respectively;
- a first doping region including the impurities in the second conductive type, and disposed at an upper portion of the epitaxial layer, between the first well region and the second well region;
- a second doping region including the impurities in the first conductive type, and disposed between the first well region and one side of the first doping region while being contact with the first well region and the one side of the first doping region;
- a third doping region including the impurities in the first conductive type, and disposed between the second well region and an opposite side of the first doping region while being contact with the second well region and the opposite side of the first doping region;
- and
- a gate overlapped with each of the first doping region, the second doping region, the third doping region, the source region, and the well region.
A method for fabricating a semiconductor device, the method comprising:
- forming a first doping region, which includes impurities in a first conductive type, on an entire surface of an upper portion of an epitaxial layer including the impurities in the first conductive type;
- forming a mask at a partial region of the upper portion of the epitaxial layer;
- forming a first spacer on opposite side surfaces of the mask such that at least a portion of the first spacer is overlapped with the first doping region;
- forming a first well region and a second well region including impurities in a second conductive type by employing the mask and the first spacer as a barrier layer, such that the first well region and the second well region are spaced apart from each other by a predetermined distance while making contact with the epitaxial layer;
- removing the first spacer and forming a second spacer on the opposite side surfaces of the mask;
- forming a first well region and a second well region including impurities in a second conductive type by employing the mask and the first spacer as a barrier layer, such that the first well region and the second well region are spaced apart from each other by a predetermined distance while making contact with the epitaxial layer;
- removing the second spacer;
- forming a second doping region under the mask by doping the impurities in the second conductive type, on the opposite surfaces of the mask;
- removing the mask;
- and
- forming a gate to be overlapped with each of the first doping region, the second doping region, the first source region, the second source region, the first well region, and the second well region.
Dependencies are inferred from the claim text.