H10D 30/023
Having multiple independently-addressable gate electrodes influencing the same channel
Official title: {having multiple independently-addressable gate electrodes influencing the same channel (manufacture or treatment of dual gate TFTs H10D30/031)}
H10D30/023 (Having multiple independently-addressable gate electrodes influencing the same channel) appears on 526 US grants and 559 published applications in this corpus.
Search patents in H10D- Granted patents
- 526
- Published applications
- 559
- Assignees
- 189
- Inventors
- 1,004
- Latest grant
- 4 Aug 2026
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| Year | Granted patents | Published applications |
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| 1996 | 3 | 0 |
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| 2000 | 3 | 0 |
| 2001 | 6 | 0 |
| 2002 | 5 | 7 |
| 2003 | 9 | 7 |
| 2004 | 4 | 7 |
| 2005 | 7 | 14 |
| 2006 | 5 | 7 |
| 2007 | 13 | 12 |
| 2008 | 5 | 12 |
| 2009 | 7 | 6 |
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| 2021 | 27 | 25 |
| 2022 | 26 | 29 |
| 2023 | 23 | 23 |
| 2024 | 22 | 20 |
| 2025 | 17 | 18 |
| 2026 | 13 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Methods of manufacturing semiconductor devices and transistors420US 8,377,779 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Accurate control of distance between suspended semiconductor nanowires and substrate surface279US 8,927,968 B2International Business Machines Corporation · 2015
- Methods of fabricating multichannel metal oxide semiconductor (MOS) transistors170US 7,670,912 B2Samsung Electronics Co., Ltd. · 2010
- Method of making a vertical current flow field effect transistor123US 5,164,325 ASiliconix Incorporated · 1992
- Threshold voltage adjustment for long-channel transistors118US 7,968,411 B2Micron Technology, Inc. · 2011