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US 12,666,683 B2Granted
Semiconductor device with reduced leakage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMotoki Tamura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first well and a second well. The first well is configured to operate as a back gate terminal of a first transistor. The second well is separated from the first well, and is configured to operate as a back gate terminal of a second transistor. Each of a first source/drain terminal of the second transistor, and a first source/drain terminal of the first transistor and the back gate terminal of the first transistor are coupled to each other.
Claims20
A method, comprising:
- forming a first well above a second well;
- forming a third well above the second well;
- forming a portion of the second well between the first well and the third well to separate the first well and the third well from each other,
- forming a first doped region and a second doped region in the first well;
- forming a first gate structure between the first doped region and the second doped region;
- forming a third doped region and a fourth doped region in the third well;
- forming a second gate structure between the third doped region and the fourth doped region;
- coupling the first well to the second doped region and the third doped region;
- forming a fifth doped region and a sixth doped region in the first well;
- forming a third gate structure between the fifth doped region and the sixth doped region;
- and
- coupling the third gate structure to the second gate structure.
9 more elements
A method, comprising:
- forming a substrate;
- forming a first well above a second well in the substrate;
- forming a third well above the second well;
- forming a fourth well separated from the second well in the substrate;
- forming a portion of the second well between the first well and the third well to separate the first well and the third well from each other,
- forming a first doped region and a second doped region in the first well;
- forming a first gate structure between the first doped region and the second doped region;
- and
- forming a third doped region in the fourth well;
- and
- forming a fourth doped region in the third well,
- wherein the fourth doped region is coupled to the second doped region,
- wherein the third doped region is coupled to the first gate structure.
10 more elements
A method, comprising:
- forming a substrate;
- forming a first well above a second well in the substrate;
- forming a third well separated from the second well in the substrate;
- forming a first doped region in the first well;
- and
- forming a second doped region in the third well,
- wherein the first doped region is coupled to the second doped region, and
- the second well surrounds the first well in a layout view.
5 more elements
Dependencies are inferred from the claim text.