Low-frequency nosie transistors with curved channels

A transistor comprising:

• a substrate;
• at least one fin protruding upwardly from a top surface of the substrate, wherein the at least one fin comprises a first fin and a second fin, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section;
• at least one drain located at the first fin or the second fin;
• at least one source located at the first fin or the second fin;
• and
• at least one curved channel located at the first curved section or the second curved section of the first fin or the second fin.

A method comprising:

• forming a substrate;
• forming a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section;
• forming a first drain and a second drain located at the first straight section of the first fin and the first straight section of the second fin, respectively;
• forming a first source and a second source located at the second straight section of the first fin and the second straight section of the second fin, respectively;
• forming a first curved channel and a second curved channel located at the first curved section of the first fin and the first curved section of the second fin, respectively;
• and
• forming a third curved channel and a fourth curved channel located at the second curved section of the first fin and the second curved section of the second fin, respectively.