Threshold voltage adjustment for long-channel transistors
AssigneeMicron Technology, Inc.
InventorEthan Williford
Life of this patent
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Abstract
A threshold voltage adjusted long-channel transistor fabricated according to short-channel transistor processes is described. The threshold-adjusted transistor includes a substrate with spaced-apart source and drain regions formed in the substrate and a channel region defined between the source and drain regions. A layer of gate oxide is formed over at least a part of the channel region with a gate formed over the gate oxide. The gate further includes at least one implant aperture formed therein with the channel region of the substrate further including an implanted region within the channel between the source and drain regions. Methods for forming the threshold voltage adjusted transistor are also disclosed.
Claims14
A method for forming a transistor, comprising:
- forming a drain region and a source region with a channel region therebetween in a substrate, the channel region extending in a plane parallel with a major plane of the substrate;
- forming a gate including at least one aperture extending therethrough to the substrate;
- and
- forming doped regions in at least a portion of the channel region in the substrate below the at least one aperture of the gate.
A method for adjusting a threshold voltage of a transistor, comprising:
- forming at least one aperture in a gate to a channel region of a substrate, the gate forming a transistor with the channel region extending between a drain region and a source region in a direction parallel with a major direction of the substrate;
- and
- implanting a first dopant through the at least one aperture into at least a portion of the channel region of the substrate.
A method of forming a transistor, comprising:
- forming a device including a substrate with a source, a drain, and a gate formed thereon, the gate including at least one aperture to at least a portion of a channel region between the source and the drain, the channel region extending in a plane parallel with a major plane of the substrate;
- and
- implanting a dopant through the at least one aperture.
Dependencies are inferred from the claim text.