H10D 30/022
Having lightly-doped source or drain extensions selectively formed at the sides of
Official title: {having lightly-doped source or drain extensions selectively formed at the sides of the gates}
H10D30/022 (Having lightly-doped source or drain extensions selectively formed at the sides of) appears on 667 US grants and 644 published applications in this corpus.
Search patents in H10D- Granted patents
- 667
- Published applications
- 644
- Assignees
- 181
- Inventors
- 1,168
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 1 | 0 |
| 1998 | 8 | 0 |
| 1999 | 14 | 0 |
| 2000 | 18 | 0 |
| 2001 | 35 | 10 |
| 2002 | 31 | 22 |
| 2003 | 31 | 19 |
| 2004 | 23 | 14 |
| 2005 | 14 | 18 |
| 2006 | 16 | 11 |
| 2007 | 5 | 5 |
| 2008 | 7 | 10 |
| 2009 | 5 | 4 |
| 2010 | 5 | 5 |
| 2011 | 8 | 11 |
| 2012 | 7 | 13 |
| 2013 | 12 | 20 |
| 2014 | 21 | 34 |
| 2015 | 36 | 46 |
| 2016 | 39 | 58 |
| 2017 | 46 | 41 |
| 2018 | 39 | 33 |
| 2019 | 29 | 48 |
| 2020 | 37 | 39 |
| 2021 | 28 | 34 |
| 2022 | 37 | 45 |
| 2023 | 31 | 41 |
| 2024 | 27 | 20 |
| 2025 | 28 | 32 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Semiconductor device having LDD regions232US 6,909,114 B1Semiconductor Energy Laboratory Co.Ltd. · 2005
- Field-effect transistor for alleviating short-channel effects174US 6,548,842 B1National Semiconductor Corporation · 2003
- Material removal method for forming a structure171US 6,261,964 B1Micron Technology, Inc. · 2001
- Method to produce localized halo for MOS transistor160US 6,743,684 B2Texas Instruments Incorporated · 2004
- Method to produce localized halo for MOS transistor143US 7,064,039 B2Texas Instruments Incorporated · 2006