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US 12,666,681 B2Granted
Semiconductor structure and fabricating method of the same
AssigneeUnited Microelectronics Corp.
InventorsYi-Fan Li, Chen-Ming Wang, Po-Ching Su, Pei-Hsun Kao, Ti-Bin Chen, Chun-Wei Yu, Chih-Chiang Wu
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Abstract
A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.
Claims19
A semiconductor structure, comprising:
- a substrate;
- a gate structure disposed on the substrate;
- a liner oxide contacting a side of the gate structure;
- a silicon oxide spacer contacting the liner oxide, wherein an end of the silicon oxide spacer forms a kink profile;
- a silicon nitride spacer contacting the silicon oxide spacer, wherein a tail of the silicon nitride spacer covers part of the kink profile;
- and
- a stressor covering the silicon nitride spacer and the substrate.
4 more elements
A fabricating method of a semiconductor structure, comprising:
- providing a substrate;
- forming a gate structure disposed on the substrate;
- forming a liner oxide contacting a side of the gate structure;
- forming a silicon oxide spacer contacting the liner oxide, wherein an end of the silicon oxide spacer forms a kink profile;
- forming a silicon nitride spacer contacting the silicon oxide spacer, wherein a tail of the silicon nitride spacer covers part of the kink profile;
- and
- forming a stressor covering the silicon nitride spacer and the substrate.
4 more elements
Dependencies are inferred from the claim text.