Back to results
US 12,641,810 B2Granted
Semiconductor product with low-leakage current and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Hsiung Lin, Chieh Chih Ting, Simon Yaou-Dong Wang
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor product is provided. The method comprises forming a semiconductor device within a wafer utilizing a predetermined number of masks. The method further comprises forming a first low-leakage semiconductor device within the wafer utilizing a first set of additional masks. The first low-leakage semiconductor device has a lower leakage current than that of the semiconductor device.
Claims20
A method for manufacturing a semiconductor product, comprising:
- forming a semiconductor device within a wafer utilizing a predetermined number of masks;
- forming a first low-leakage semiconductor device within the wafer utilizing the predetermined number of masks and a first set of additional masks, wherein the first set of additional masks comprises two additional masks, the first low-leakage semiconductor device has a lower leakage current than that of the semiconductor device, the first low-leakage semiconductor device has a lower saturation current than that of the semiconductor device, implant concentration of a channel of the first low-leakage semiconductor device is higher than that of the semiconductor device, and the first set of additional masks are utilized to form a lightly doped drain (LDD) region on the first low-leakage semiconductor device so that the first low-leakage semiconductor device is used as a memory device;
- and
- forming a low-leakage circuit within the wafer utilizing the first set of additional masks, wherein the low-leakage circuit and the first low-leakage semiconductor device are fabricated at the same time by utilizing the first set of additional masks.
1 more element
A method for manufacturing a semiconductor product, comprising:
- forming a semiconductor device having a first transistor within a wafer utilizing a predetermined number of masks;
- forming a low-leakage circuit having a second transistor within the wafer utilizing the predetermined number of masks and a first set of additional masks, wherein the first set of additional masks comprises two additional masks, implant concentration of the channel of the second transistor is higher than that of the first transistor, and a saturation current of the second transistor is lower than that of the first transistor;
- and
- forming a first low-leakage semiconductor device having a third transistor within the wafer utilizing the predetermined number of masks and the first set of additional masks, wherein the first set of additional masks are utilized to form a lightly doped drain (LDD) region on the first low-leakage semiconductor device so that the first low-leakage semiconductor device is used as a memory device, and a saturation current of the third transistor is lower than that of the first transistor, wherein the low-leakage circuit and the first low-leakage semiconductor device are fabricated at the same time by utilizing the first set of additional masks.
1 more element
A method for manufacturing a semiconductor product, comprising:
- forming a semiconductor device including a first transistor arranged in a wafer by utilizing a predetermined number of masks;
- forming a low-leakage circuit including a second transistor arranged in the wafer by utilizing the predetermined number of masks and a first set of additional masks, wherein the first set of additional masks comprises two additional masks, a saturation current of the second transistor is lower than that of the first transistor;
- and
- forming a first low-leakage semiconductor device having a third transistor arranged in the wafer, wherein implant concentration of the channel of the second transistor is different than that of the first transistor, a saturation current of the third transistor is lower than that of the first transistor, and wherein implant concentration of the channel of the third transistor is substantially identical to that of the second transistor, and the first set of additional masks are utilized to form a lightly doped drain (LDD) region on the first low-leakage semiconductor device so that the first low-leakage semiconductor device is used as a memory device, wherein the low-leakage circuit and the first low-leakage semiconductor device are fabricated at the same time by utilizing the first set of additional masks.
1 more element
Dependencies are inferred from the claim text.