Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a substrate, a dielectric layer, a gate structure, a lightly doped region, a first spacer and a heavily doped region. The dielectric layer is disposed on the substrate and includes a first section with a first thickness and a second section with a second thickness, the first thickness is greater than the second thickness, and the second section surrounds the first section. The gate structure covers a portion of the first section. The lightly doped region is formed in the substrate and adjacent to the gate structure. The first spacer is disposed on sidewalls of the gate structure and covers another portion of the first section. The heavily doped region is disposed in the lightly doped region and adjacent to the second section.

Dependencies are inferred from the claim text.