H10D 30/027
Of lateral single-gate igfets
Official title: {of lateral single-gate IGFETs}
H10D30/027 (Of lateral single-gate igfets) appears on 3,191 US grants and 3,343 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,191
- Published applications
- 3,343
- Assignees
- 435
- Inventors
- 4,183
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 10 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 3 | 0 |
| 1987 | 6 | 0 |
| 1988 | 8 | 0 |
| 1989 | 6 | 0 |
| 1990 | 6 | 0 |
| 1991 | 9 | 0 |
| 1992 | 17 | 0 |
| 1993 | 19 | 0 |
| 1994 | 15 | 0 |
| 1995 | 15 | 0 |
| 1996 | 11 | 0 |
| 1997 | 20 | 0 |
| 1998 | 36 | 0 |
| 1999 | 56 | 0 |
| 2000 | 59 | 0 |
| 2001 | 56 | 20 |
| 2002 | 64 | 63 |
| 2003 | 58 | 62 |
| 2004 | 52 | 74 |
| 2005 | 63 | 144 |
| 2006 | 64 | 144 |
| 2007 | 81 | 177 |
| 2008 | 81 | 186 |
| 2009 | 120 | 131 |
| 2010 | 139 | 117 |
| 2011 | 133 | 146 |
| 2012 | 96 | 189 |
| 2013 | 175 | 210 |
| 2014 | 175 | 195 |
| 2015 | 211 | 249 |
| 2016 | 242 | 234 |
| 2017 | 227 | 183 |
| 2018 | 187 | 144 |
| 2019 | 142 | 131 |
| 2020 | 119 | 127 |
| 2021 | 101 | 75 |
| 2022 | 74 | 91 |
| 2023 | 69 | 76 |
| 2024 | 66 | 51 |
| 2025 | 56 | 60 |
| 2026 | 18 | 64 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/0275Forming single crystalline semiconductor source or drain regions resulting in recessed gates1,850
- H10D 30/0278Forming single crystalline channels on wafers after forming insulating device isolations484
- H10D 30/0273Forming final gates or dummy gates after forming source and drain electrodes241
- H10D 30/0277Forming conductor-insulator-semiconductor or schottky barrier source or drain regions179
Recent patents
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Method for producing a microelectronic device25 Aug 2026US 12,721,068 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Doping profile for strained source/drain region4 Aug 2026US 12,701,751 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device, and semiconductor device28 Jul 2026US RE50,975 E1Sony Group Corporation
- Semiconductor device with cap element14 Jul 2026US 12,684,840 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure and method of forming the same1 Oct 2026US 2026/0304895 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and fabrication method thereof24 Sep 2026US 2026/0293235 A1United Microelectronics Corp.
- Semiconductor device24 Sep 2026US 2026/0293298 A1Samsung Electronics Co., Ltd.
- Semiconductor device17 Sep 2026US 2026/0282497 A1United Microelectronics Corp.
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Active programmable electronic devices for molecular biological analysis and diagnostics1,006US 5,605,662 ANanogen, Inc. · 1997
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013