Method for producing a microelectronic device

A method for forming crystalline SiC-based regions on either side of an N-type transistor channel, comprising:

• providing a substrate comprising a crystalline silicon-based layer having a thickness e,
• forming at least one masking pattern on a surface of the crystalline silicon-based layer, with the at least one masking pattern having openings, with said openings corresponding to implantation regions of the crystalline silicon-based layer,
• amorphising the crystalline silicon-based layer through the openings of the at least one masking pattern, in the implantation regions, to a depth d strictly less than the thickness e, so as to form amorphised implantation regions in the crystalline silicon-based layer,
• implanting carbon into the amorphised implantation regions using the at least one masking pattern,
• performing thermal recrystallisation annealing to turn the amorphised implantation regions into crystalline SiC-based regions,
• forming through epitaxy of raised source and drain regions on the crystalline SiC-based regions, and
• after forming the crystalline SiC-based regions, forming a transistor gate on the silicon-based layer with a vertical edge of the transistor gate being formed directly at a vertical edge of the crystalline SiC-based regions.