H10D 30/0273
Forming final gates or dummy gates after forming source and drain electrodes
Official title: {forming final gates or dummy gates after forming source and drain electrodes, e.g. contact first technology}
H10D30/0273 (Forming final gates or dummy gates after forming source and drain electrodes) appears on 241 US grants and 186 published applications in this corpus.
Search patents in H10D- Granted patents
- 241
- Published applications
- 186
- Assignees
- 78
- Inventors
- 409
- Latest grant
- 30 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 6 | 0 |
| 2001 | 7 | 4 |
| 2002 | 12 | 7 |
| 2003 | 1 | 1 |
| 2004 | 5 | 3 |
| 2005 | 3 | 6 |
| 2006 | 3 | 6 |
| 2007 | 1 | 7 |
| 2008 | 3 | 13 |
| 2009 | 5 | 10 |
| 2010 | 6 | 8 |
| 2011 | 11 | 8 |
| 2012 | 9 | 19 |
| 2013 | 15 | 17 |
| 2014 | 11 | 8 |
| 2015 | 12 | 17 |
| 2016 | 16 | 8 |
| 2017 | 7 | 8 |
| 2018 | 11 | 7 |
| 2019 | 8 | 11 |
| 2020 | 8 | 3 |
| 2021 | 3 | 3 |
| 2022 | 3 | 5 |
| 2023 | 3 | 1 |
| 2024 | 2 | 3 |
| 2025 | 5 | 2 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Transistor gate trench engineering to decrease capacitance and resistance30 Sep 2025US 12,433,007 B2Intel Corporation
- Semiconductor device and semiconductor device manufacturing method10 Jun 2025US RE50,457 E1Sony Group Corporation
- Field effect transistor and fabrication method thereof8 Apr 2025US 12,274,087 B2United Microelectronics Corp.
- Method for fabricating semiconductor device18 Feb 2025US 12,230,509 B2United Microelectronics Corp.
- Contacts for semiconductor devices and methods of forming the same4 Feb 2025US 12,218,209 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof18 Jun 2026US 2026/0173425 A1Powerchip Semiconductor Manufacturing Corporation
- Method for fabricating semiconductor device8 May 2025US 2025/0149344 A1United Microelectronics Corp.
- Contacts for Semiconductor Devices and Methods of Forming the Same1 May 2025US 2025/0142932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor and fabrication method thereof18 Apr 2024US 2024/0128324 A1United Microelectronics Corp.
- Contacts for Semiconductor Devices and Methods of Forming the Same14 Mar 2024US 2024/0088244 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method for fabricating high-speed thin-film transistors282US 7,960,218 B2Wisconsin Alumni Research Foundation · 2011
- Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions258US 5,960,270 AMotorola, Inc. · 1999
- Transistor having high mobility channel and methods143US 7,682,887 B2International Business Machines Corporation · 2010
- Metal gate transistors with epitaxial source and drain regions132US 7,332,439 B2Intel Corporation · 2008