Method for fabricating high-speed thin-film transistors
AssigneeWisconsin Alumni Research Foundation
InventorsZhenqiang Ma, Hao-Chih Yuan, Guogong Wang
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Abstract
This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
Claims20
A method for fabricating a TFT from a single crystal silicon substrate having a top surface, the method comprising:
- (a) creating a hydrogen implantation layer below the top surface of the silicon substrate, whereby a device layer is defined between the top surface of the substrate and the hydrogen implantation layer;
- (b) creating a source region, a drain region and a gate channel region in the device layer;
- (c) subsequently splitting the silicon substrate at the hydrogen implantation layer to release the device layer.
A method for fabricating a TFT from a device substrate comprising (1) a device layer comprising a single crystal semiconductor material and (2) a sacrificial layer supporting the active layer, the method comprising:
- (a) creating a source region, a drain region and a gate channel region in the device layer;
- (b) subsequently releasing the device layer from the sacrificial layer;
- (c) transferring the released device layer to a polymer film substrate;
- (d) subsequently depositing a gate dielectric on the gate channel region, wherein the deposition of the gate dielectric is carried out at a temperature of no more than about 150° C.;
- (e) forming a source electrode on the source region;
- (f) forming a drain electrode on the drain region;
- and
- (g) forming a gate electrode on the gate dielectric.
Dependencies are inferred from the claim text.